Ipp power conversion company is the world's leading supplier of power management devices based on enhanced gallium nitride. We are also the first company to introduce the enhanced silicon gallium nitride field effect transistor, which is an alternative to silicon power MOSFET in power management applications. Its performance is several times better than the best silicon power MOSFET.
Our products are used in various fields including load point converters, Ethernet power supply, computer market servers and dc-dc converters, LED lighting, mobile phones, rf transmission, solar micro inverters and class D audio amplifiers.

Yipu power conversion company was founded by several engineers in 2007.
Together, they have accumulated 60 years of relevant experience in advanced power management devices.

Alex Lidow, CEO of ipp, is one of the co-inventors of HEXFET® power MOSFET.
In addition to leading research and development and manufacturing roles, Alex Lidow has been CEO of international rectifier for 12 years.
For more than 35 years, Alex's mission has been to develop new semiconductors that enhance our ability to efficiently convert and use energy.

From the very beginning, it was clear to the founders that silicon products had reached their limits.
At the same time, the potential replacement of silicon products is gallium nitride devices, but at that time it was still a big problem in terms of cost and device function.
The original yep team vowed to develop cost-effective GaN products to replace power MOSFET, which required significant innovation in manufacturing, material science and device physical performance.



Epp launched the first commercially enhanced GaN transistor (eGaN®) in June 2009, manufactured at a low-cost foundry in Taiwan that had been producing standard silicon CMOS products.



With this milestone, yipu and the whole power management industry have embarked on a new journey, which is expected to bring new design features with added value to users.



EGaN FET will soon replace traditional power MOSFET in applications requiring higher efficiency, smaller size, or higher operating frequency.
Epp, the first company to launch eGaN FET on the market, will continue to lead the development of eGaN FET to provide power system design engineers with performance that cannot be achieved by silicon power MOSFET.